Integrated Circuit - IC's Manufacturer STMicroelectronics Flash Memory flash memory M28F101 memory

M28F101 Datasheet – 1Mb 128Kx8, Chip Erase Flash Memory IC

By Hamza Khan Jul 8, 2023

Overview

The M28F101 FLASH Memory is a non-volatile memory that may be erased electrically at the chip level and programmed byte-by-byte. It is or- gained as 128K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor inter- face. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high-speed microprocessor systems.

Part Number	M28F101
Function	1 Mb (128K x 8, Chip Erase) FLASH MEMORY
Package	DIP, PLCC, TSOP 32 Pin Type
Manufacturer	STMicroelectronics
Datasheet	Download PDF

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M28F101 Features

5V±10% SUPPLY VOLTAGE
12V PROGRAMMING VOLTAGE
FAST ACCESS TIME: 70ns
BYTE PROGRAMMING TIME: 10µs typical
ELECTRICAL CHIP ERASE in 1s RANGE
LOW POWER CONSUMPTION – Stand-by Current: 100µA max
10,000 ERASE/PROGRAM CYCLES
INTEGRATED ERASE/PROGRAM-STOP TIMER
OTP COMPATIBLE PACKAGES and PINOUTS
ELECTRONIC SIGNATURE
- Manufacturer Code: 20h
- Device Code: 07h

Absolute Maximum Ratings

Symbol	Parameter	Value	Unit
TA	Ambient Operating Temperature	–40 to 125	°C
TSTG	Storage Temperature	–65 to 150	°C
VIO	Input or Output Voltages	–0.6 to 7	V
VCC	Supply Voltage	–0.6 to 7	V
VA9	A9 Voltage	–0.6 to 13.5	V
Vpp	Program Supply Voltage, during Erase or Programming	–0.6 to 14	V

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M28F101 Pinout

Pin Definitions

Pin Name	Description
A0-A16	Address Inputs
DQ0-DQ7	Data Inputs / Outputs
E	Chip Enable
G	Output Enable
W	Write Enable
V_PP	Program Supply
VCC	Supply Voltage
V_SS	Ground

Applications

Non-volatile storage
Embedded systems
Firmware storage
Program code storage
Bootloader memory